Low Power Amplifier Design Using CMOS Active Inductor
نویسنده
چکیده
In this paper, a CMOS low power amplifier based on a high-quality active inductor and implemented by using 0.25-μm 1P5M CMOS standard technology is presented. The amplifier achieves power gain (S21) of 18dB within the -3dB cutoff frequency, bandwidth of 1.3GHz, and power consumption of 18mW under 2.5V power supply in 188 × 174μm silicon area. The input third-order intercept point (IIP3) and the noise figure (NF) are -13dBm and 10dB, respectively. Key-Words: Amplifier, Bandwidth, S-parameter, Noise Figure, and Power Consumption.
منابع مشابه
Design of a Uhf Band Lna Using Active Inductor with Ffp Noise Cancelling Technique
This paper reports an area-efficient LNA design using an active inductor which can be realised in various UHF band receivers. The overall low noise performance of LNA is achieved by cancelling the inductor noise through additional feed forward path. This circuit is implemented using 0.18μm CMOS technology with cadence environment and its operating range is 0.4 to 1GHz. Design is simulated in vi...
متن کاملA Design of CMOS Broadband Amplifier With High-Q Active Inductor
A CMOS broadband amplifier with high-Q active inductor using 0.25um CMOS process is presented. In this broadband amplifier, the compact high-Q active inductor is connected to the common-gate configuration to improve the performance of the high power gain, wide bandwidth, low power consumption and simple matching characteristics. Not using any passive inductor components is to be reduced the are...
متن کاملA CMOS 2.0-11.2 GHz UWB LNA using active inductor circuit
A fully-active low-noise amplifier (LNA) for ultrawideband application is presented. Passive on-chip inductor of conventional LNA design is replaced by low-noise active inductor, significantly reducing the total chip area of the proposed CMOS LNA. The core LNA circuit is a cascoded common-source amplifier loaded with an active inductor. Two buffer stages are used to provide the required input a...
متن کاملA CMOS Multi-band Low Noise Amplifier Using High-Q Active Inductors
In this paper, a CMOS Multi-band LNA using High-Q active inductors load with a binary code band selector suitable for multi-standards wireless applications is proposed. Using an improved high-Q active inductor including two bits binary controlled code, the multi-band low noise amplifier operating at four different frequency bands is realized. The proposed amplifier is designed in TSMC 0.18-um C...
متن کاملA Radio Frequency CMOS Band Pass Amplifier Using High-Q Active Inductor Loads with Binary Code for Multi-Band Selecting
In this paper, a CMOS radio frequency (RF) multi-band band-pass amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing the improved high-Q active inductor including two bits binary controlled code, the RF multi-band amplifier operating at four different frequency bands is realized. The proposed ...
متن کامل